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Turn Table Type Vertical Furnace for Mass Production

This large-batch, diffusion, LPCVD, vertical furnace performs 4- to 8-inch wafer ultra-high-temperature treatment.
The system can be flexibly configured to enable your production line to process a variety of products. This furnace excels at power device manufacturing.

Features

  • Flexible equipment configuration is available for various production lines
  • 50 to 150 wafers batch size can be selected
  • 4- to 8-inch wafer size is available
  • 4 to 8 cassette stocks
  • Excellent temperature control from low to medium high temperature range using an LGO heater
  • High-speed wafer transfer using a single/five wafers handling robot
  • Equipped with an operator-friendly high performance control system
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Overview

This vertical furnace for 4- to 8-inch wafers flexibly meets your production line needs. You can choose the number of wafers to process from 50 to 150. You choose the heater from an LGO heater, molybdenum disilicide (MoSi2) heater and carbon heater so the furnace can be used for not only low-temperature annealing, nitride (Si3N4), polysilicon (poly Si) and other material LPCVD, oxidation and diffusion processing but also for SiC power device gate silicon oxynitriding, activation annealing and other ultra-high-temperature processing.

Specifications

Model VF-5100
Outer dimension W900 × D1850 × H2930 mm (100 wafers)
W1000 × D1950 × H3300 mm (150 wafers)
Heater LGO heater
Flat zone length 360 to 960 mm
Wafer size 4 to 8 inch
Batch size Max. 150 wafers
I/O port 1
Number of cassette stock 4 to 8
Finger 5 wafers + single wafer
HOST communication HSMS/GEM (Option)
Options Forced-cooling system
N2 load lock
Thin wafer handling
Convertible wafer size

Related Solution Cases

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