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Turn Table Type Vertical Furnace for Mass Production

This large-batch, diffusion, LPCVD, vertical furnace performs 4- to 8-inch wafer ultra-high-temperature treatment.
The system can be flexibly configured to enable your production line to process a variety of products. This furnace excels at power device manufacturing.

Features

  • Flexible equipment configuration is available for various production lines
  • 50 to 150 wafers batch size can be selected
  • 4- to 8-inch wafer size is available
  • 4 to 8 cassette stocks
  • Excellent temperature control from low to medium high temperature range using a Light Gauge Over-bend heater
  • High-speed wafer transfer using a single/five wafers handling robot
  • Equipped with an operator-friendly high performance control system
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Overview

This vertical furnace for 4- to 8-inch wafers flexibly meets your production line needs. You can choose the number of wafers to process from 50 to 150. You choose the heater from a Light Gauge Over-bend heater, molybdenum disilicide (MoSi2) heater and carbon heater so the furnace can be used for not only low-temperature annealing, nitride (Si3N4), polysilicon (poly Si) and other material LPCVD, oxidation and diffusion processing but also for SiC power device gate silicon oxynitriding, activation annealing and other ultra-high-temperature processing.

Specifications

Model VF-5100
Outer dimension W900 × D1850 × H2930 mm (100 wafers)
W1000 × D1950 × H3300 mm (150 wafers)
Heater Light Gauge Over-bend heater
Flat zone length 360 to 960 mm
Wafer size 4 to 8 inch
Batch size Max. 150 wafers
I/O port 1
Number of cassette stock 4 to 8
Finger 5 wafers + single wafer
HOST communication HSMS/GEM (Option)
Options Forced-cooling system
N2 load lock
Thin wafer handling
Convertible wafer size

Related Solution Cases

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