Lamp Annealing System for Contact Annealing (N2 load-lock transport)
Vacuum load-lock on the chamber and N2 load-lock on the transport unit improve throughput.
Supports various wafers including Si, GaN, and SiC.
Features
- Supports a wide range of wafer sizes up to 8 inches.
- Includes an automated susceptor transfer function for SiC and GaN wafers.
- Halogen lamps are installed in both an upper and lower cross.
- 6 zone control allows easy control of the power ratio for each zone.
- Non-contact measurement of workpiece temperature is performed using radiative thermometers, and feedback control is possible.
Overview
This is a lamp annealing system that uses multiple halogen lamps arranged in an upper and lower cross as the heat source, and is intended for rapid, high-precision annealing of wafers. A vacuum-resistant quartz tube and N2 atmosphere transport platform enables processing in an ultra-low oxygen atmosphere.
This furnace also enables GaN substrate processing as well as SiC and Si.
Specifications
| Model | RLA-3100-V |
|---|---|
| Operation temperature | 400 to 1200°C |
| Heat up rate | Max. 200°C/sec |
| Lamp layout | Upper & lower cross lamp arrays |
| Wafer size | Up to 8 inch |
| Gases used | N2, Ar, O2, H2 |
| Applications | Contact annealing, oxidation (enables depressurized processing and processing in N2 load-lock environments) |
| Workpieces | Si, SiC wafers, GaN, others |
Applications
Customize
Related Solution Cases
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See Solution Cases
[case-004] Improving Productivity (fully automated transfer)
Improving productivity with fully automated transfer
- Contact annealing
- RLA-3000-V
