Lamp Annealing System for Rapid Thermal Processing
This system for 4- to 8-inch wafers performs activation and oxidation in a vacuum (LP) environment and N2 load-lock atmosphere.
Features
- Upper & lower cross lamp structure and heat uniformizing unit improve the uniformity of in-plane temperature
- Multi-axis clean robot enables high-speed and accurate wafer transfer
- Max 50 wafers continuous processing is available
- Vacuum designed quartz tube enables accurate gas substitution and process at vacuum pressure
Overview
This lamp annealing system can process a maximum of 50 wafers (4-inch to 8-inch) through high-speed heating at 200°C/sec. The upper and lower cross halogen lamps achieve superior uniform in-plane temperature distribution. Thanks to the quartz tube designed to be resistant to vacuum, wafers can be processed in a clean vacuum (LP) environment and N2 load lock atmosphere.
Specifications
| Model | RLA-3100 |
|---|---|
| Outer dimension | W900 × D1850 × H2250 mm |
| Operation temperature | 400 to 1200°C |
| Heat up rate | Max. 200°C/sec |
| Lamp layout | Upper & lower cross lamp arrays |
| Number of control zone | 6 |
| Wafer size | 4 to 8 inch |
| I/O port | 2 |
| Wafer transfer | Single wafer / multi-axis clean robot |
| Options | Vacuum system HOST communication (HSMS/GEM) N2 Load Lock |
