RLA-1200 Lamp Annealing System for Rapid Thermal Processing
This lamp annealing system for 4-inch to 8-inch wafers achieves high-quality processing even for use in R&D.
Activation and oxidation are available in a vacuum (LP) environment and N2 load-lock atmosphere.
Features
- High performance process with R&D
- Low-cost system by manual susceptor transfer
- Upper & lower cross lamp structure and soaking furnace improve the uniformity of in-plane temperature
- 4- to 8-inch wafer size is available
- Equipped with an operator-friendly high performance control system
- Vacuum designed quartz tube enables accurate gas substitution and process at vacuum pressure
Overview
This lamp annealing system for the R&D of 4-inch to 8-inch wafers saves processing cost thanks to high-speed heating at 200°C/sec and manual susceptor transfer. The structure using the upper and lower cross halogen lamps achieves superior in-plane temperature uniformity, making both low-cost and high-quality processing reality. Thanks to the quartz tube designed to include a vacuum resistant property, processing is available in a clean vacuum (LP) environment and N2 load lock atmosphere.
Specifications
| Outer dimension | W1300×D1300×H1850 mm |
|---|---|
| Operation temperature | 400 to 1200°C |
| Heat up rate | Max. 200°C/sec |
| Lamp layout | Upper & lower cross lamp arrays |
| Number of control zone | 6 |
| Wafer size | 4 to 8 inch |
| Wafer transfer | Manual |
| Options | Vacuum system Clean bench |
